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| DAN 801 / DAP 801 (200 mW) Small Signal Diode Arrays Dioden Satze mit Allzweckdioden Nominal power dissipation Nenn-Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung 9 Pin-Plastic case 9 Pin-Kunststoffgehause Weight approx. - Gewicht ca. Dimensions / Mae in mm 200 mW 80 V 24 x 3.5 x 6.6 [mm] 0.6 g see page 22 s. Seite 22 Standard packaging: bulk Standard Lieferform: lose im Karton "DAP": common anodes / gemeinsame Anoden "DAN": common cathodes / gemeinsame Kathoden Maximum ratings Type Typ DAN 801 DAP 801 Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 80 80 Grenzwerte Surge peak reverse voltage Stospitzensperrspannung VRSM [V] 80 80 Max. average forward rectified current, R-load, for one diode operation only per diode for simultaneous operation Dauergrenzstrom in Einwegschaltung mit R-Last, fur eine einzelne Diode pro Diode bei gleichzeitigem Betrieb Peak forward surge current, 50 Hz half sine-wave Stostrom fur eine 50 Hz Sinus-Halbwelle TA = 25/C IFAV IFAV IFAV IFAV IFSM 100 mA 1) 25 mA 1) 100 mA 1) 25 mA 1) 500 mA TU = 25/C TA = 25/C 1 ) Leads kept at ambient temperature at a distance of 3 mm from case Anschludrahte in 3 mm Abstand von Gehause auf Umgebungstemperatur gehalten 28.02.2002 364 DAN 801 / DAP 801 (200 mW) Operating junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj TS - 50...+150/C - 50...+150/C Characteristics Forward voltage Durchlaspannung Leakage current Sperrstrom Reverse recovery time Sperrverzug Tj = 25/C Tj = 25/C IF = 10 mA VR = 20 V VF IR trr RthA Kennwerte < 1.0 V < 25 nA < 4 ns < 85 K/W 1) IF = 10 mA through/uber IR = 10 mA to/auf IR = 1 mA Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft ) Leads kept at ambient temperature at a distance of 3 mm from case Anschludrahte in 3 mm Abstand von Gehause auf Umgebungstemperatur gehalten 28.02.2002 1 365 |
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